Compound semiconductor integrated circuit and optical regenerati

Details Compound semiconductor integrated circuit and optical regenerati Compound semiconductor integrated circuit and optical regenerati

1993-03-25

1996-06-04

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257195, 257280, 257514, 257547, H01L 29778, H01L 310352

Patent

active

055235930

ABSTRACT:
By forming an isolated semiconductor layer or electrode layer on a semiconductor surface between neighboring field effect transistors and element separating trenches which are deep enough to reach at least the semi-insulating substrate or the hetero junction interface on the buffer layer, low frequency oscillation of a compound semiconductor integrated circuit can be reduced. By controlling the thickness of the buffer layer having a hetero junction to at most 150 nm, the low frequency oscillation can be reduced. By forming materials separating adjacent elements with a width of at most 2 .mu.m which reach from the element region surface to the buffer layer having hetero junction so as to enclose the element regions and etched regions in the neighborhood of the elements or so as to enclose the element regions in the etched regions and by controlling the angle of the sides of the etched regions against the semiconductor layer surface to 10.degree. to 60.degree., wires can be prevented from short-circuiting.

REFERENCES:
patent: 4470062 (1984-09-01), Muramatsu
patent: 5254863 (1993-10-01), Battersby

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