Compound semiconductor integrated circuit

Details Compound semiconductor integrated circuit Compound semiconductor integrated circuit

1992-01-06

1993-10-26

Westin, Edward P.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307448, 257368, H03K 11094

Patent

active

052569152

ABSTRACT:
A semiconductor integrated circuit produces a driving signal for driving a load. The semiconductor integrated circuit includes a compound semiconductor substrate, a logic part including at least a first field effect transistor formed on the compound semiconductor substrate for outputting a first signal, and a driver part including at least a second field effect transistor formed on the compound semiconductor substrate and outputting the first signal through the second field effect transistor as a driving signal. The first field effect transistor is a self-aligned type field effect transistor having a first gate electrode and first and second impurity regions formed in self-alignment to the first gate electrode. The second field effect transistor is a non-self-aligned type field effect transistor having a second gate electrode and third and fourth impurity regions formed in non-self-alignment to the second gate electrode.

REFERENCES:
patent: 4816705 (1989-03-01), Ohba et al.
patent: 4888626 (1989-12-01), Davey
patent: 4937474 (1990-06-01), Sitch
patent: 4958089 (1990-09-01), Fitzpatrick et al.
Paul L. Greiling, "High-Speed Digital IC Performance Outlook," IEEE Transactions on Microwave Theory and Techniques, vol. 35, No. 3, Mar. 1987, New York, N.Y., pp. 245-259.
Patent Abstracts of Japan, vol. 12, No. 389 (E-669)(3236) Oct. 17, 1988 & JP-A-63 131581 (Hitachi Ltd.) Jun. 4, 1988.

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