Compound semiconductor high frequency switch device

Details Compound semiconductor high frequency switch device Compound semiconductor high frequency switch device

2005-08-23

2005-08-23

Lee, Eddie (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S192000, C257S183000

Reexamination Certificate

active

06933543

ABSTRACT:
A high frequency switch device includes an epitaxy substrate that is formed by sequentially stacking an AlGaAs/GaAs superlattic buffer layer, a first Si planar doping layer, an undoped first AlGaAs spacer, an undoped InGaAs layer, an undoped second AlGaAs spacer, a second Si planar doping layer having a doping density greater than that of the first Si planar doping layer, and an undoped GaAs/AlGaAs capping layer on a GaAs semi-insulated substrate. The undoped GaAs/AlGaAs capping layer is formed with a source electrode and a drain electrode that form an ohmic contact with the undoped GaAs/AlGaAs capping layer thereon, and a gate electrode formed between the source electrode and the drain electrode, thereby forming a Schottky contact with the undoped GaAs/AlGaAs capping layer.

REFERENCES:
patent: 2001-210819 (2001-08-01), None
patent: 1020020090345 (2002-12-01), None
“Low-Insertion-Loss DP3T MMIC Switch for Dual-Band Cellular Phones”, A. Nagayama, et al., IEEE Journal of Solid-State Circuits, vol. 34, No. 8, Aug. 1999.

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