Compound semiconductor field effect transistor having a gate ins

Details Compound semiconductor field effect transistor having a gate ins Compound semiconductor field effect transistor having a gate ins

1991-12-02

1993-04-27

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257411, H01L 29267, H01L 29780

Patent

active

052065286

ABSTRACT:
A field effect transistor comprises a current channel layer formed on an InP substrate through a buffer layer and formed of InGaAs having a lattice constant in match with that of InP, and a source electrode and a drain electrode formed on the current channel layer separately from each other and in ohmic contact with the current channel layer. An insulator layer is formed on the current channel layer between the source electrode and the drain electrode, and a gate electrode is formed on the insulator layer. The insulator layer being composed of a superlattice layer formed of alternately stacked undoped InAs thin films and undoped AlAs thin films. A ratio t.sub.1 /t.sub.2 of the thickness t.sub.1 of each one InAs thin film and the thickness t.sub.2 of one AlAs thin film adjacent to the each one InAs thin film is gradually reduced toward to an upper surface of the superlattice layer.

REFERENCES:
patent: 5107314 (1992-04-01), Kahng et al.

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