Compound semiconductor field effect transistor having a controll

Details Compound semiconductor field effect transistor having a controll Compound semiconductor field effect transistor having a controll

1995-07-25

1997-01-07

Fahmy, Wael M.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257194, 257280, H01L 310328, H01L 310336, H01L 2980

Patent

active

055919944

ABSTRACT:
A field effect transistor includes a substrate of a compound semiconductor material, source and drain regions formed in the substrate, a channel region defined between the source and said drain regions, a gate electrode provided on the substrate so as to cover the channel region, and a pair of diffusion suppressing regions provided in the substrate respectively at both lateral ends of the channel region, each of the diffusion suppressing regions containing an electrically inert element that suppresses a diffusion of a dopant element therethrough.

REFERENCES:
patent: 4665415 (1987-05-01), Esaki et al.
patent: 4755865 (1988-07-01), Wilson et al.
patent: 5161235 (1992-11-01), Shur et al.
patent: 5351128 (1994-09-01), Goto et al.

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