Compound semiconductor field effect transistor

Details Compound semiconductor field effect transistor Compound semiconductor field effect transistor

1995-09-28

1997-06-24

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257194, H01L 310328, H01L 310336

Patent

active

056419775

ABSTRACT:
On a semi-insulative GaAs substrate, a n-type GaAs layer, an undoped InGaAs layer, a n.sup.+ -type GaAs layer are grown in order and a SiO.sub.2 layer is deposited thereon. Subsequently, a photoresist layer having an opening at a gate region is formed. With taking the photoresist layer as a mask, side etching is performed for the SiO.sub.2 layer up to the width corresponding to a recess width. With taking SiO.sub.2 layer as a mask, wet etching is performed for n.sup.+ -type GaAs layer. The wet etching is further extended to the intermediate depth position of the undoped InGaAs layer. By lift off method employing the photoresist layer, a gate electrode is formed on the center of the bottom of the recess. A source electrode and a drain electrode are also formed. Thus, since the corner portions of the recess is formed of a material (InGaAs) difficult to cause dislocation, the compound semiconductor field effect transistor can prevent degradation of characteristics in high temperature burn-in test.

REFERENCES:
patent: 5140386 (1992-08-01), Hwang et al.
T. Furutsuka, et al., "Improvement of the Drain Breakdown Voltage of GaAs Power MESFET's by a Simple Recess Structure", IEEE Transactions on Electron Devices, vol. ED-25, No. 6, Jun. 1978, pp. 563-567.

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