Compound semiconductor field-effect transistor

Details Compound semiconductor field-effect transistor Compound semiconductor field-effect transistor

1988-09-23

1990-07-17

James, Andrew J.

357 22, 357 4, 357 15, H01L 2980

Patent

active

049424386

ABSTRACT:
A compound field-effect transistor has a substrate with an epitaxial layer formed thereon. The layer includes two planar-doped layers, each of which is one approximately atom thick and is formed by atomic-planar-doping in two dimensions. The space separating the two planar-doped layers is equal to or less than a mean free path of electrons. A large majority of the carrier electrons are present at the center of the space between the two planar-doped electrons, which suppresses the scattering of impurity ions. As a result, there is an ultra-high-speed transistor.

REFERENCES:
Schubert et al, "IEEE Transactions on Electron Devices", vol. ED-33, No. 5, May 1987, pp. 625-632.

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