Compound semiconductor epitaxial wafer

Details Compound semiconductor epitaxial wafer Compound semiconductor epitaxial wafer

1989-09-19

1991-01-22

Hille, Rolf

Fishing, trapping, and vermin destroying

357 17, 357 16, 357 61, 437 93, H01L 2904, H01L 3300, H01L 29161, H01L 29205

Patent

active

049874721

ABSTRACT:
An epitaxial wafer of gallium phosphide single crystal having an epitaxial layer of gallium phosphide arsenide mixed crystal grown on the surface by the method of vapor-phase epitaxial growth can be freed from surface defects and greatly improved in respect of the electroluminescent intensity of the light-emitting diode prepared therefrom, yield of the light-emitting diodes which can be obtained from said single epitaxial wafer the growth rate of the epitaxial layer when the substrate wafer has a crystallographic surface plane which is inclined from the {001} plane in the <110> direction by 8.degree. to 15.degree. or a crystallographically equivalent plane thereto.

REFERENCES:
patent: 4216484 (1980-08-01), Hasegawa et al.
patent: 4865655 (1989-09-01), Fujita et al.
patent: 4927778 (1990-05-01), Abbas
patent: 4928154 (1990-05-01), Umeno et al.
Shaw, D. W., "Influence of Substrate Temperature on GaAs Epitaxial Deposition Rates" J. Electrochemical Society, Apr. 1968, pp. 405-408.

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