Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2003-12-19
2010-06-08
Monbleau, Davienne (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S192000, C257SE29246, C257SE29247, C257SE29248
Reexamination Certificate
active
07732836
ABSTRACT:
In a compound semiconductor epitaxial substrate used for a strain channel high electron mobility field effect transistor which comprises an InGaAs layer as a channel layer9and AlGaAs layers containing n-type impurities as electron supplying layers6and12, the channel layer9has an electron mobility at room temperature of 8300 cm2/V·s or more by adjusting an In composition of the InGaAs layer composing the channel layer9to 0.25 or more and optimizing the In composition and the thickness of the channel layer9. GaAs layers8and10having a thickness of 4 nm or more each may be laminated respectively in contact with a top surface and a bottom surface of the channel layer9.
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Inoue Takayuki
Nakano Tsuyoshi
Osada Takenori
Monbleau Davienne
Rodela Eduardo A
Sughrue & Mion, PLLC
Sumika Epi Solution Company, Ltd.
Sumitomo Chemical Company Limited
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