Compound semiconductor epitaxial substrate

Details Compound semiconductor epitaxial substrate Compound semiconductor epitaxial substrate

2004-04-07

2009-06-23

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S190000, C257S198000

Reexamination Certificate

active

07550786

ABSTRACT:
A compound semiconductor epitaxial substrate including a substrate, and a sub-collector layer, a collector layer, a base layer, an emitter layer and a contact layer(s) formed in this order on the substrate, the compound semiconductor epitaxial substrate having an oxygen-containing layer between the substrate and the sub-collector layer.

REFERENCES:
patent: 5332451 (1994-07-01), Hata et al.
patent: 6046464 (2000-04-01), Schetzina
patent: 2000-315692 (2000-11-01), None
patent: 2002-25922 (2002-01-01), None
patent: 2002-280545 (2002-09-01), None

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