Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – As active junction in bipolar transistor
Patent
1992-09-02
1996-09-10
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
As active junction in bipolar transistor
257476, H01C 2978, H01L 3300
Patent
active
055548776
ABSTRACT:
An electroluminescent device of compound semiconductor includes a compound semiconductor substrate having at least one through-hole, an electroluminescent part consisting of a plurality of epitaxial compound semiconductor layers formed on the substrate, and at least a pair of electrodes having external leads in which one electrode is connected to the uppermost layer of the electroluminescent part and another electrode is directly connected to the lowest layer of the electroluminescent part through the through-hole of the substrate. Thereby, a voltage from an external source is enabled to be directly applied to the electroluminescent part.
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Kitagawa Masahiko
Tomomura Yoshitaka
Meier Stephen D.
Sharp Kabushiki Kaisha
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