Compound semiconductor devices and methods of making compound se

Details Compound semiconductor devices and methods of making compound se Compound semiconductor devices and methods of making compound se

1995-03-14

1996-12-17

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257 95, 257 96, H01L 3300

Patent

active

055856497

ABSTRACT:
A compound semiconductor device with an improved internal current blocking structure. The semiconductor device includes an n-clad layer of II-VI compound semiconductor, a p-clad layer of II-VI compound semiconductor, an active layer of II-VI compound semiconductor between the n-clad and p-clad layers, a very thin current blocking layer of n-type II-VI compound semiconductor on the p-clad layer and providing an opening, a p-contact layer of p-type II-VI compound semiconductor on the p-clad layer and the current blocking layer at the opening, and a p-side electrode on the p-contact layer.

REFERENCES:
patent: 5010376 (1991-04-01), Nishimara et al.
patent: 5027169 (1991-06-01), Takahashi et al.
patent: 5281830 (1994-01-01), Ketaki et al.
patent: 5306924 (1994-04-01), Usami et al.
"Room Temperature Continuous Operation of Blue-Green Laser Diodes", N. Nakayama et al., Electronics Letters, 29(16):1488-1489 (1993).

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