Compound semiconductor device with T-shaped gate electrode...

Details Compound semiconductor device with T-shaped gate electrode... Compound semiconductor device with T-shaped gate electrode...

2011-03-15

2011-03-15

Tran, Long K (Department: 2818)

Semiconductor device manufacturing: process

Forming schottky junction

C438S167000, C438S285000, C438S590000, C257SE21068, C257SE21069, C257SE21186, C257SE21401

Reexamination Certificate

active

07906417

ABSTRACT:
A method for manufacturing a compound semiconductor device forms an EB resist layer on first SiN film, performs EB exposure at high dose for recess forming opening and at low dose for eaves removing opening, develops the high dose EB resist pattern to etch the first SiN film, selectively etches the cap layer to form a recess wider than the opening of the first SiN film leaving eaves of SiN, develops the low dose EB resist pattern to form the eaves removing opening, etches the first SiN film to extinguish the eaves, forms second SiN film on the exposed surface, forms a resist pattern having a gate electrode opening on the second SiN film to etch the second SiN film, forms a metal layer to form a gate electrode by lift-off. The SiN film in eaves shape will not be left.

REFERENCES:
patent: 2002/0187623 (2002-12-01), Oikawa et al.
patent: 2005/0068211 (2005-03-01), Arai et al.
patent: 2007/0267652 (2007-11-01), Amasuga et al.
patent: 2008/0237605 (2008-10-01), Murata et al.
patent: 0601541 (1994-06-01), None
patent: 6-232179 (1994-08-01), None
patent: 03067764 (2003-08-01), None

Affiliated with

Also associated with

Rating

Compound semiconductor device with T-shaped gate electrode... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Compound semiconductor device with T-shaped gate electrode..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Compound semiconductor device with T-shaped gate electrode... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2719385