Compound semiconductor device with superlattice channel region

Details Compound semiconductor device with superlattice channel region Compound semiconductor device with superlattice channel region

1987-04-24

1990-01-16

James, Andrew J.

357 16, 357 4, H01L 29205, H01L 2980

Patent

active

048946915

ABSTRACT:
A compound semiconductor device having a channel layer which is made of periodically laminated structure of thin-film layers of compound semiconductor substantially being different from each other. The difference of energy between the conduction band and the valence band of compound semiconductor thin-film layers of one side is less than that of the other side thin-film layers, moreover the electron mobility in low electric field application in the thin-film layers of compound semiconductor of one side is greater than that of the other side thin-film layers, besides the electron mobility in high electric field application in the thin-film layers of compound semiconductor of one side is less than that of the other side thin-film layers, and/or the impact ionization of valence electron generated in high electric field application takes place earlier than the thin-film layers of compound semiconductor of the other side. While conduction electron preferentially flows through the thin-film layers of compound semiconductor of one side in low electric field application, and conversely, while conduction electron having substantial energy intensified by acceleration preferentially flows through other side thin-film layers in high electric field application.

REFERENCES:
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patent: 4688061 (1987-08-01), Sakaki
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Tamargo et al., Appl. Phys. Lett. 46 (6) 15 Mar. 85, pp. 569-571, "Growth of a Novel InAs-GaAs . . . ".
Zipperian et al., "An In.sub.2 Ga.sub.2 As/GaAs . . . Transistor", Int. Elec. Dev. Meet. 1983, Wash. D.C., pp. 696-699.
Milnes, "Semiconductor . . . Overview", Solid State Electronics, vol. 29, No. 2, pp. 99-121, 1986 Feb.
Bhattacharya et al., "Material . . . Review", Solid State Electronics, vol. 29, No. 2, pp. 261-267, Feb. 1986.

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