Compound semiconductor device with nitride

Details Compound semiconductor device with nitride Compound semiconductor device with nitride

1995-09-11

1997-12-02

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257 96, 257 97, 257102, 257103, H01L 3300

Patent

active

056939639

ABSTRACT:
A light emitting diode is arranged on a sapphire substrate. The light emitting diode includes an n-GaN layer, an n-InGaN light-emitting layer, a p-AlGaN layer and a P-GaN layer, which are grown through vapor phase growth in this sequence. Within the p-GaN layer and p-AlGaN layer, 1.times.10.sup.20 cm.sup.-3 of Mg and 2.times.10.sup.19 cm.sup.-3 of Mg are contained, respectively. Within each of the n-GaN layer and n-InGaN light-emitting layer, 5.times.10.sup.18 cm.sup.-3 of hydrogen is contained, thereby preventing Mg from diffusing therein from the p-GaN layer and p-AlGaN layer.

REFERENCES:
patent: 5278433 (1994-01-01), Manabe et al.
patent: 5281830 (1994-01-01), Kotaki et al.

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