Compound semiconductor device with different gate-source and gat

Details Compound semiconductor device with different gate-source and gat Compound semiconductor device with different gate-source and gat

1993-02-24

1994-03-22

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257280, 257283, 257284, H01L 2980, H01L 31112

Patent

active

052967280

ABSTRACT:
A compound semiconductor device includes a first semiconductor layer, a second semiconductor layer providing source and drain regions, and a composite layer consisting of a bottom SiN layer, and SiON layer and a top SiN layer on the second semiconductor layer. A gate electrode has a perpendicular portion extending through an opening in the composite layer and an enlarged region above the top SiN layer to support the electrode at a position closer to the source region than the drain region, and the bottom SiN layer and the SiON layer are recessed so as to be spaced from the gate electrode.

REFERENCES:
patent: 4656076 (1987-04-01), Vetanen et al.
patent: 4839304 (1989-06-01), Morikawa
patent: 4963501 (1990-10-01), Ryan et al.
patent: 5105242 (1992-04-01), Fujihira et al.
patent: 5110751 (1992-05-01), Nakagawa
Webster's II, New Riverside University Dictionary, 1984, p. 876.
"Low-Noise FET for Microwave Applications" by Kiyoho Kamei et al., Toshiba Review, vol. 43, No. 8 (1988), pp. 621-624.

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