Compound semiconductor device with a particular gate structure

Details Compound semiconductor device with a particular gate structure Compound semiconductor device with a particular gate structure

1993-12-10

1995-02-21

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257194, 257284, H01L 2978, H01L 29784, H01L 29812

Patent

active

053918991

ABSTRACT:
A compound semiconductor device includes a plurality of epitaxial compound semiconductor layers including an InGaAs layer as the uppermost layer disposed on a semi-insulating compound semiconductor substrate, a groove penetrating through at least the InGaAs layer, an insulating film disposed on the side surfaces of the groove and having ends extending beyond the groove, a gate electrode disposed in the groove and on the insulating film, and source and drain electrodes on the InGaAs layer at opposite sides of the groove self-aligned with the ends of the insulating film.

REFERENCES:
patent: 4074300 (1978-02-01), Sakai et al.
patent: 4141022 (1979-02-01), Sigg et al.
patent: 4873558 (1989-10-01), Antreasyan et al.
patent: 5105241 (1992-04-01), Ando
patent: 5172197 (1992-12-01), Nguyen et al.

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