Compound semiconductor device which utilizes an electron supply

Details Compound semiconductor device which utilizes an electron supply Compound semiconductor device which utilizes an electron supply

1990-01-22

1992-03-24

James, Andrew J.

357 22, H01L 29161

Patent

active

050992953

ABSTRACT:
A compound semiconductor device having a channel layer and an electron supply layer and using a two-dimensional electron gas. The channel layer near the interface between the channel layer and the electron supply layer is formed as a graded layer. It is possible to realize a compound semiconductor device which has good characteristics and which can be easily fabricated.

REFERENCES:
patent: 4740822 (1988-04-01), Itoh
patent: 4827320 (1989-05-01), Morkoc et al.
Okamoto et al., "Strained N-Ga.sub.0.7 Al.sub.0.3 As/In.sub.x Ga.sub.1-x As/GaAs Modulation-Doped Structure," Japanese Journal of Applied Physics, vol. 26 No. 4, Apr. 1987, pp. 539-542.
Henderson et al., "Characterization of Pseudomorphic InGaAs/AlGaAs MODFET Structures Grown by Molecular Beam Epitaxy," IEDM, Dec. 1987, pp. 418-421.

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