Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2005-03-28
2009-08-11
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257S076000, C257SE33001, C438S046000
Reexamination Certificate
active
07573075
ABSTRACT:
A compound semiconductor device includes hexagonal silicon carbide crystal substrate and a boron-phosphide-based semiconductor layer formed on the silicon carbide crystal substrate, wherein the silicon carbide crystal substrate has a surface assuming a {0001} crystal plane, and the boron-phosphide-based semiconductor layer is composed of a {111} crystal stacked on and in parallel with the {0001} crystal plane of the silicon carbide crystal substrate, and when the number of the layers contained in one periodical unit of an atomic arrangement in the [0001] crystal orientation of the silicon carbide crystal substrate is n, an n-layer-stacked structure included in the {111} crystal plane forming the {111} crystal has a stacking height virtually equal to the c-axis lattice constant of the silicon carbide crystal substrate.
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Pert Evan
Quinto Kevin
Showa Denko K.K.
Sughrue & Mion, PLLC
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