Compound semiconductor device on silicon substrate and method of

Details Compound semiconductor device on silicon substrate and method of Compound semiconductor device on silicon substrate and method of

1995-12-06

1997-11-11

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257347, H01L 310328, H01L 310336, H01L 31072, H01L 31109

Patent

active

056867417

ABSTRACT:
E and D mode HEMTs are integrated in a laminated layer of pairs of GaAs/AlGaAs layers formed on the same GaAs-on-Si substrate. The gate electrodes of E and D mode HEMTs are formed on different GaAs layers. The GaAs layer on Si contains crystal defects. It is hypothesized that the defects extend upward in the laminated layer of pairs of GaAs/AlGaAs layers formed on the GaAs layer with such crystal defects. Etch pits are generated as the AlGaAs layer is etched by ammonium etchant. Generation of etch pits can be suppressed by etching the whole part of the exposed AlGaAs layer and exposing the GaAs layer under the gate electrode.

REFERENCES:
patent: 4952527 (1990-08-01), Lalawa et al.
patent: 5276340 (1994-01-01), Yokoyama et al.

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