Compound semiconductor device including implanted isolation regi

Details Compound semiconductor device including implanted isolation regi Compound semiconductor device including implanted isolation regi

1996-01-11

1997-06-17

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257194, 257499, H01L 310328, H01L 310336, H01L 2900

Patent

active

056400268

ABSTRACT:
A method of performing element separation by ion implantation for a compound semiconductor device includes performing first ion implantation into the entire contour of the device periphery region to produce a first insulating region having a region of the maximum ion implantation concentration serving as an insulation destruction relaxing layer within a buffer layer located at the deepest position of epitaxial growth layers. Even when there is a distribution of implanted ions in the depth direction at the thermal processing in the wafer process, the implanted ions diffuse so that the concentration of ions is uniform in the depth direction and a thermally stable ion implantation concentration as well as stable device characteristics are obtained. A second insulating region having a resistance different from that of the first insulating region may be further produced by a second ion implantation at a position in the device periphery region, therefore electric field concentration at the interface between the insulating region and the gate metal is relaxed and a stable high gate junction breakdown voltage is secured. Thus, a highly reliable element separating technique and a highly reliable device are obtained.

REFERENCES:
patent: 4728616 (1988-03-01), Ankri et al.
patent: 5010381 (1991-04-01), Shiba
patent: 5086004 (1992-02-01), Quintana
patent: 5185274 (1993-02-01), Chang et al.
patent: 5254492 (1993-10-01), Tserng et al.
patent: 5256579 (1993-10-01), Lezec et al.
patent: 5302840 (1994-04-01), Takikawa

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