Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Patent
1997-01-31
1999-08-31
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
257194, 257280, 257282, 257289, H01L 310328, H01L 310336, H01L 31072, H01L 31109
Patent
active
059456949
ABSTRACT:
A semiconductor device (20) is formed on a compound semiconductor substrate (21). The semiconductor device (20) is oriented on the surface (40) of the compound semiconductor substrate (21) such that the physical forces that result from the thermal heating or cooling of the compound semiconductor substrate (21) are essentially equal. This orientation reduces the variability of the drain to source current of the semiconductor device (20) as the semiconductor device (20) is operated at different temperatures.
REFERENCES:
Asbeck et al., "Piezoelectric Effects in GaAs FET's and Their Role in Orientation-Dependent Device Characteristics", IEEE Transactions on Electron Devices, vol. ED-31, No. 10, Oct. 1984, pp. 1377-1380.
T. Onodera et al., "Improvement in GaAs MESFET Performance Due to Piezoelectric Effect", IEEE Transactions on Electron Devices, Nov. 1985, vol. ED-32, No. 11, pp. 2314-2318.
Costa Julio C.
Martinez Marino J.
Reyes Adolfo C.
Schirmann Ernest
Wilson Mark R.
Chen George C.
Mintel William
Motorola Inc.
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