Compound semiconductor device having nonalloyed ohmic contacts

Details Compound semiconductor device having nonalloyed ohmic contacts Compound semiconductor device having nonalloyed ohmic contacts

1989-12-21

1990-10-02

Mintel, William

357 16, 357 15, 357 90, 357 65, 357 4, H01L 2980

Patent

active

049611941

ABSTRACT:
An ohmic contact layer is provided between an n-GaAs
-AlGaAs/undoped GaAs double-heterojunction structure and source/drain electrodes in a high electron mobility transistor. The ohmic contact layer comprises In.sub.x Ga.sub.1-x As or Ge. The ohmic contact layer has a function of considerably reducing a specific contact resistance of a barrier formed at an interface between the ohmic contact layer and the source and drain electrodes. Thereby, a nonalloyed ohmic contact is formed between the source and drain electrodes and source and drain regions formed in the undoped GaAs layer.

REFERENCES:
patent: 4325181 (1962-04-01), Yoder
patent: 4593301 (1986-06-01), Inata et al.
Coblenz, "Semiconductor Compounds", Electronics Buyers' Guide, Jun. 1958, Mid-Month, pp. R-4 to R-5.
Woodall et al., "Ohmic Contacts to N-GaAs Using Graded Band Gap Layers of Ga.sub.1-x As Grown by Molecular Beam Epitaxy," J. Vac. Sci. Technol, 19(3), Sep./Oct. 1981, pp. 626-627.
Ng et al., "Study of the Consequence of Excess Indium in the Active Channel of InGaAs/InAlAs High Electron Mobility Transistors on Device Properties," Appl. Phys. Lett., 52(9), Feb. 29, 1988, pp. 728-730.
Electronic Letters, vol. 20, No. 15, Jul. 1984, pp. 615-618, Stevenage, Herts, GB; H. Dambkes et al., "Optimisation of Modulation-Doped Heterostructures for TEGFET Operation at Room Temperature".
IEEE Electron Device Letters, vol. EDL-8, No. 1, Jan. 1987, pp. 24-26, IEEE, New York, U.S.; C. K. Peng et al.: "Microwave Performance of InAlAs/InGaAs/InP MODFET's".
Electronics Letters, vol. 17, No. 6, Mar. 19, 1981, pp. 215-216, London, GB; T. Ishibashi: "InP MESFET with In0.53Ga0.47/As/InP Heterostructure Contacts".

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