Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Having graded composition
Patent
1992-03-17
1993-11-30
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Having graded composition
257197, 257587, 257655, 257745, H01L 29161
Patent
active
052668185
ABSTRACT:
A compound semiconductor device wherein a contact to an n type Al.sub.x Ga.sub.1-x As layer comprises an In.sub.x Ga.sub.1-x As graded-composition layer, an In.sub.x Ga.sub.1-x As contact layer having a constant composition and a metal electrode layer, the In.sub.x Ga.sub.1-x As graded-composition layer is doped with an n type impurity which concentration is higher than a concentration of an impurity activated as n type, whereby, even when a thickness of the In.sub.x Ga.sub.1-x As graded-composition layer is made sufficiently small, a reduction in the carrier concentration of the thin graded-composition layer causes no increase of its resistance and a low-resistance contact is realized.
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Morizuka Kouhei
Tsuda Kunio
Bowers Courtney A.
James Andrew J.
Kabushiki Kaisha Toshiba
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