Compound semiconductor device having a reduced resistance

Details Compound semiconductor device having a reduced resistance Compound semiconductor device having a reduced resistance

1996-03-05

1997-10-28

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257192, 257194, H01L 310328, H01L 310336, H01L 31072, H01L 31109

Patent

active

056820402

ABSTRACT:
A method for fabricating a semiconductor device includes a step of depositing a first compound semiconductor layer by a MOVPE process to have a first conductivity type, doping a surface of the first compound semiconductor layer to the same, first conductivity type, by implementing a planar doping process as a result of decomposition of a gaseous dopant, such that no substantial growth of the first compound semiconductor layer occurs during the planar doping process, and depositing a second compound semiconductor layer of the first conductivity type on the doped surface of the first compound semiconductor layer by a MOVPE process.

REFERENCES:
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patent: 5373186 (1994-12-01), Schubert et al.
patent: 5393990 (1995-02-01), Kohn
Shirakashi, J. et al., "Characterization of Heavily Carbon-doped GaAs With a Hole . . . ", Journal of Crystal Growth, vol. 150, 1995, pp. 585-590.
Dubon-Chevallier, C. et al., "GaAs/GaInP HBT Structures Grown By CBE With a Highly . . . ", Inst. Phys. Conf., Ser. No. 129, 1993, pp. 705-710.
Fujita, S. et al., "Novel Hemt Structures Using . . . ", Fifth International Conf. on Indium Phosphide and Related Material, 1993, pp. 498-500.
Sueiro, H. et al., "Highly Doped InGaP/InGaAs/GaAs . . . " IEEE Transactions on Electrons Devices, vol. 41, No. 10, 1994, pp. 1743-1746.

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