Compound semiconductor device having a multilayer silicon struct

Details Compound semiconductor device having a multilayer silicon struct Compound semiconductor device having a multilayer silicon struct

1998-05-04

1999-08-24

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

257195, 257200, 257629, 257631, 257646, H01L 310328

Patent

active

059427922

ABSTRACT:
A multi-layer structure inserted onto an interface between a compound semiconductor region and a highly resistive material region includes an epitaxial silicon layer up to 1.5 nm thick in contact with the compound semiconductor region and an amorphous silicon layer from 1 to 10 nm thick in contact with the highly resistive material region and laminated on the epitaxial silicon layer.

REFERENCES:
patent: 4935384 (1990-06-01), Wanlass
patent: 5523592 (1996-06-01), Nakagawa et al.
patent: 5679598 (1997-10-01), Yee
Satoshi Kodama et al., Novel Surface Passivation Scheme for Compound Semiconductor Using Silicon Interface Control Layer and its Application to Near-Surface Quantum Wells, pp. 1143-1148, Japan Journal Appl. Phys., Vol. 34, Part 1, No. 2B, Feb. 1995.

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