Compound semiconductor device having a group III-V compound semi

Details Compound semiconductor device having a group III-V compound semi Compound semiconductor device having a group III-V compound semi

1997-08-29

1999-08-17

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257 96, 257 97, 257103, 257201, 372 44, 372 45, 372 46, H01L 3300

Patent

active

059397330

ABSTRACT:
A compound semiconductor device includes a substrate and a group III-V compound semiconductor layer provided on the substrate, wherein the group III-V compound semiconductor layer contains As as a group V element and Tl as a group III element.

REFERENCES:
patent: Re29009 (1976-10-01), Jeffers
patent: 3849874 (1974-11-01), Jeffers
patent: 4512638 (1985-04-01), Sriram
patent: 5483088 (1996-01-01), Chen et al.
Asahi, et al. "New III-V Compound Semiconductors TIInGaP for 0.9 um to over 10 um Wavelength Range Laser Diodes and Their First Successful Growtn" (Jpn. J. Appl. Phys. vol 35 (1996), Part 2, No. 7B Jul 15, 1996, pp. L876-L879).

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