Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than...
Patent
1998-11-20
2000-11-14
Guay, John
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
257 94, 257 96, 257 97, 257 13, 257102, 257103, 257190, 257609, 44 45, 44 44, H01L 31256, H01L 3300
Patent
active
061473642
ABSTRACT:
A gallium nitride (GaN)-based semiconductor device comprises a substrate, a single-crystal layer consisting mainly of GaN with a magnesium (Mg) concentration of N.sub.bg1 cm.sup.-3, the single-crystal layer being provided near the substrate and having a thickness of d.sub.1 .mu.m, and a semiconductor layer consisting mainly of Ga.sub.1-x Al.sub.x N having an Al composition x of at least 0.02 and not higher than 1 and having a thickness of d.sub.2 .mu.m. The single-crystal layer is situated between the substrate and the semiconductor layer, and Mg is added to the semiconductor layer at a concentration of N.sub.Mg cm.sup.-3. The Al composition x, the concentration N.sub.Mg, the concentration N.sub.bg1, the thickness d.sub.1 and the thickness d.sub.2 have the following relationship
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Shuji Nakamura et al., "InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets", JPN.J. Appl.. Phys., vol. 35, No. 28, (pp. L217-L219), Feb. 15, 1996.
Fujimoto Hidetoshi
Itaya Kazuhiko
Nishio Johji
Sugiura Lisa
Suzuki Mariko
Guay John
Kabushiki Kaisha Toshiba
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