Compound semiconductor device formed of nitrogen-containing gall

Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than...

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257 94, 257 96, 257 97, 257 13, 257102, 257103, 257190, 257609, 44 45, 44 44, H01L 31256, H01L 3300

Patent

active

061473642

ABSTRACT:
A gallium nitride (GaN)-based semiconductor device comprises a substrate, a single-crystal layer consisting mainly of GaN with a magnesium (Mg) concentration of N.sub.bg1 cm.sup.-3, the single-crystal layer being provided near the substrate and having a thickness of d.sub.1 .mu.m, and a semiconductor layer consisting mainly of Ga.sub.1-x Al.sub.x N having an Al composition x of at least 0.02 and not higher than 1 and having a thickness of d.sub.2 .mu.m. The single-crystal layer is situated between the substrate and the semiconductor layer, and Mg is added to the semiconductor layer at a concentration of N.sub.Mg cm.sup.-3. The Al composition x, the concentration N.sub.Mg, the concentration N.sub.bg1, the thickness d.sub.1 and the thickness d.sub.2 have the following relationship

REFERENCES:
patent: 5278435 (1994-01-01), Van Hove et al.
patent: 5290393 (1994-03-01), Nakamura
patent: 5693963 (1997-12-01), Fujimoto et al.
Shuji Nakamura et al., "InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets", JPN.J. Appl.. Phys., vol. 35, No. 28, (pp. L217-L219), Feb. 15, 1996.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Compound semiconductor device formed of nitrogen-containing gall does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Compound semiconductor device formed of nitrogen-containing gall, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Compound semiconductor device formed of nitrogen-containing gall will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2067435

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.