Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2007-10-29
2009-12-22
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C438S459000, C438S478000
Reexamination Certificate
active
07635638
ABSTRACT:
A compound semiconductor device epitaxial growth substrate, wherein a semiconductor substrate, a substrate protective layer made of a material that is different from the material of the substrate, a middle layer for making separation of the semiconductor substrate and a compound semiconductor device layer possible, and a compound semiconductor device layer that is formed through epitaxial growth are layered in this order; and a semiconductor device which uses the compound semiconductor device layer that is gained by separating the semiconductor substrate, the substrate protective layer and the middle layer from this compound semiconductor device epitaxial growth substrate; as well as manufacturing methods for these.
REFERENCES:
patent: 4774194 (1988-09-01), Hokuyou
patent: 5773355 (1998-06-01), Inoue et al.
patent: 6037242 (2000-03-01), Hayafuji et al.
patent: 6778573 (2004-08-01), Hayakawa et al.
patent: 6790695 (2004-09-01), Ogihara et al.
patent: 2001/0021212 (2001-09-01), Hayakawa et al.
patent: 2001/0047751 (2001-12-01), Kim et al.
patent: 2002/0195620 (2002-12-01), Tanomura et al.
patent: 2004/0108574 (2004-06-01), Hoke et al.
patent: 2004/0185638 (2004-09-01), Kakizaki et al.
patent: 2005/0066880 (2005-03-01), Furukawa et al.
patent: 1 160 851 (2001-12-01), None
patent: 52-083187 (1977-07-01), None
patent: 62-171167 (1987-07-01), None
patent: 09-232608 (1997-09-01), None
patent: 2000-252492 (2000-09-01), None
patent: 2000-277779 (2000-10-01), None
patent: 2001-257431 (2001-09-01), None
patent: 2005-019590 (2005-01-01), None
Office Action mailed Jun. 28, 2007 for parent U.S. Appl. No. 11/220,908.
Aspar et al., “Smart-Cut® Process Using Metallic Bonding: Application to Transfer of Si, GaAs, InP Thin Films”, Electronic Letters, vol. 35, No. 12, Jun. 10, 1999, pp. 1024-1025.
Schermer et al, “High Rate Epitaxial Lift-off of InGaP Films From GaAs Substrates”, Applied Physics Letters, vol. 76, No. 15, Apr. 10, 2000, pp. 2131-2133.
Voncken et al, “A Study of AlAs Etching in HF For Epitaxial Lift-off III-V Solar Cells”, 19thEuropean Photovoltaic Solar Energy Conference, Paris, France, Jun. 7-11, 2004, pp. 169-172.
EP Search Report mailed May 6, 2008 in corresponding EP applicaton 0501949.1.
Voncken et al, “Influence of Radius of Curvature on the Lateral Etch Rate of the Weight Induced Epitaxial Lift-off Process”, Materials Science and Engineering B, Elsevier Sequoia, Lausanne, OH, vol. 95, No. 3, Sep. 1, 200, pp. 242-248.
Voncken et al., “Strain-Accelerated HF Etching of A1As for Epitaxial Lift-off”, Journal of Physics: Condensed Matter, Institute of Physics Publishing, Bristol, GB, vol. 16, No. 21, Jun. 2, 2004, pp. 3585-3596.
Agui Takaaki
Takamoto Tatsuya
Nixon & Vanderhye PC
Pham Long
Sharp Kabushiki Kaisha
LandOfFree
Compound semiconductor device epitaxial growth substrate,... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Compound semiconductor device epitaxial growth substrate,..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Compound semiconductor device epitaxial growth substrate,... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4084823