Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2005-07-15
2009-12-29
Vu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257SE29246, C257SE21403, C257S027000, C257S024000
Reexamination Certificate
active
07638819
ABSTRACT:
A GaN layer functions as an electron transit layer and is formed to exhibit, at least at a portion thereof, A/B ratio of 0.2 or less obtained by a photoluminescence measurement, where “A” is the light-emission intensity in the 500-600 nm band, and “B” is the light-emission intensity at the GaN band-edge.
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Imanishi Kenji
Kikkawa Toshihide
Fujitsu Limited
Kratz Quintos & Hanson, LLP
Taylor Earl N
Vu David
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