Compound semiconductor device and method of manufacture

Details Compound semiconductor device and method of manufacture Compound semiconductor device and method of manufacture

1996-05-13

1998-09-08

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257472, 257476, 257484, 438167, H01L 2980, H01L 31112

Patent

active

058048499

ABSTRACT:
A MESFET structure (20) and a method that minimizes the effects of processing steps and device performance of the MESFET structure (20). The MESFET structure (20) has a gate (30) positioned over a channel region (28) and between a source region (36) and a drain region (34). The MESFET structure (20) further includes a hole injector region (32) formed near the channel region (28). The hole injector region (32) injects holes beneath the channel region (28) which decrease the ability of the trap sites to attract electrons generated by impact ionization. Thus, this supply of holes beneath the channel region (28) prevents the effects of IV-kink and hysteresis caused by electrons that are accumulated in the trap sites.

REFERENCES:
patent: 4054895 (1977-10-01), Ham
patent: 4633282 (1986-12-01), Lee
patent: 5124770 (1992-06-01), Umemoto et al.
patent: 5306650 (1994-04-01), O'Mara, Jr. et al.
patent: 5572048 (1996-11-01), Sugawara

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