Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1994-04-20
1995-05-02
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
257194, 257283, 257284, H01L 2948, H01L 2980
Patent
active
054122368
ABSTRACT:
In a method of making a semiconductor device, an active layer and a heavily doped cap layer are formed in turn on a semiconductor substrate, a first electrode is formed on the cap layer, a mask of a two-layer structure is formed on the cap layer, with the mask having an insulating film pattern having a non-inverted tapered opening, and a resist pattern having an inverted tapered opening and continuous with the non-inverted tapered opening, these openings being separated by a predetermined distance from the first electrode, and then a recess is formed, by performing an isotropic etching of the heavily doped layer exposed in the openings, with the recess having a bottom surface and a side wall surface rising from an edge of the bottom surface toward the upper edge with a constant radium off curvature. An oblique vapor deposition is then performed to form a second electrode to cover the bottom surface and the part of the side wall surface.
REFERENCES:
patent: 4774555 (1988-09-01), Kohn et al.
patent: 4916498 (1990-04-01), Berenz
Technical Paper of the Inst. of Electronics and Communication Engineers of Japan, ED85-101 to 113, Nov. 22, 1985, pp. 1 to 6, "A Fully Implanted SHF Low Noise GaAs MESFET", Ohta et al.
Ralph E. Williams, Gallium Arsenide Processing Techniques, Artech House, Inc., 1984, pp. 272-278.
Ikeya Masahisa
Inokuchi Kazuyuki
Saito Tadashi
OKI Electric Industry Co., Ltd.
Prenty Mark V.
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