Compound semiconductor device and method for manufacturing same

Details Compound semiconductor device and method for manufacturing same Compound semiconductor device and method for manufacturing same

2011-06-28

2011-06-28

Sefer, A. (Department: 2893)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

C438S462000, C438S463000, C438S033000, C257SE21238

Reexamination Certificate

active

07968430

ABSTRACT:
A compound semiconductor device includes a laminated body including a crystal substrate and a compound semiconductor multilayer film. The laminated body has a major surface, a first side face, a second side face, a third side face, and a fourth side face. The first and the second side faces are opposed to each other, substantially perpendicular to the major surface of the laminated body, made of cleaved surfaces. The third and the fourth side faces are perpendicular to the major surface and to the first and the second side faces, opposed to each other, and made of uncleaved surfaces. A groove is provided on the third side face, and the groove has a depth varied with position as viewed from the major surface, and has ends not reaching the first and second side face.

REFERENCES:
patent: 5852624 (1998-12-01), Matsuyama et al.
patent: 6379985 (2002-04-01), Cervantes et al.
patent: 6699774 (2004-03-01), Takyu et al.
patent: 7041523 (2006-05-01), Kawakami et al.
patent: 7183585 (2007-02-01), Kuramoto
patent: 2003/0029836 (2003-02-01), Lindstrom et al.
patent: 2004/0191942 (2004-09-01), Kawakami et al.
patent: 2005/0093009 (2005-05-01), Kuramoto
patent: 2005/0181527 (2005-08-01), Ohno et al.
patent: 2007/0093041 (2007-04-01), Tanaka et al.
patent: 1610364 (2005-12-01), None
patent: 2005-136093 (2005-05-01), None

Affiliated with

Also associated with

Rating

Compound semiconductor device and method for manufacturing same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Compound semiconductor device and method for manufacturing same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Compound semiconductor device and method for manufacturing same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2625643