Compound semiconductor device and manufacturing method thereof

Details Compound semiconductor device and manufacturing method thereof Compound semiconductor device and manufacturing method thereof

2007-11-13

2007-11-13

Landau, Matthew C. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

To compound semiconductor

C257S280000, C257S784000, C257SE23020

Reexamination Certificate

active

11150472

ABSTRACT:
A pad electrode of a field effect transistor is formed solely of a pad metal layer without providing a gate metal layer. A high concentration impurity region is provided below the pad electrode, and the pad electrode is directly contacted to a substrate. Predetermined isolation is ensured by the high concentration impurity region. Accordingly, in a structure not requiring a nitride film as similar to the related art, it is possible to avoid defects upon wire boding attributing to hardening of the gate metal layer. Therefore, in the case of a buried gate electrode structure for enhancing characteristics of the field effect transistor, it is possible to enhance reliability and yields.

REFERENCES:
patent: 5504353 (1996-04-01), Kuzuhara
patent: 5610410 (1997-03-01), Imanishi
patent: 6072203 (2000-06-01), Nozaki et al.
patent: 6281528 (2001-08-01), Wada
patent: 6534790 (2003-03-01), Kato et al.
patent: 09-181642 (1997-07-01), None
patent: 2003-007724 (2003-01-01), None

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