Compound semiconductor device and manufacturing method thereof

Details Compound semiconductor device and manufacturing method thereof Compound semiconductor device and manufacturing method thereof

2007-03-27

2007-03-27

Potter, Roy (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

C438S039000

Reexamination Certificate

active

10341697

ABSTRACT:
A compound semiconductor device including: an isolated mesa section on which an upper surface having two pairs of parallel sides is formed by mesa etching a compound semiconductor wafer, wherein the mesa section is formed from at least a forward mesa surface which is a mesa section side surface having an obtuse angle against a wafer surface and a backward mesa surface which is a mesa section side surface having an acute angle against the wafer surface, the two mesa surfaces being recognized when viewed from an X direction parallel to one pair of the two parallel sides of the upper surface of the mesa section.

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