Compound semiconductor device and its manufacture

Details Compound semiconductor device and its manufacture Compound semiconductor device and its manufacture

2006-11-07

2006-11-07

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S200000, C438S167000

Reexamination Certificate

active

07132699

ABSTRACT:
A compound semiconductor device has: a substrate; a GaN channel layer; an n-type AlqGa1−qN (0<q≦1) electron supply layer; an n-type GaN cap layer; a gate electrode disposed on the cap layer and forming a Schottky contact; recesses formed on both sides of the gate electrode on source and drain sides by at least partially removing the cap layer, the recesses having a bottom surface of a roughness larger than a roughness of a surface of the cap layer under the gate electrode; a source electrode disposed on the bottom surface of the recess on the source side; and a drain electrode disposed on the bottom surface of the recess on the drain side.

REFERENCES:
patent: 6316793 (2001-11-01), Sheppard et al.
patent: 6399493 (2002-06-01), Dawson et al.
patent: 6492669 (2002-12-01), Nakayama et al.
patent: 6528405 (2003-03-01), Martinez et al.
patent: 6639255 (2003-10-01), Inoue et al.
patent: 2001-230407 (2001-08-01), None
patent: 2002-016087 (2002-01-01), None
patent: 2002-359256 (2002-12-01), None
patent: 2002359256 (2002-12-01), None

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