Coherent light generators – Particular resonant cavity – Distributed feedback
Patent
1996-10-16
1997-12-23
Bovernick, Rodney B.
Coherent light generators
Particular resonant cavity
Distributed feedback
372 43, 372102, 437129, H01S 308, H01S 318, H01L 2120
Patent
active
057013250
ABSTRACT:
An improved compound semiconductor device, such as a distributed Bragg reflection type or distributed feedback type laser device, having regions with and regions without a diffraction grating. The device is fabricated without exhibiting surface irregularities by growing a first epitaxial layer on a semiconductor substrate, forming a fine uneven structure on the surface of the first epitaxial layer and growing a second epitaxial layer on the fine uneven structure. The fine uneven structure has a surface shape which exposes crystal orientations that facilitate subsequent epitaxial growth. In one embodiment, portions of the fine uneven structure are formed as a diffraction grating while other portions are formed insufficiently uneven to have a diffraction effect for any usable light wavelength. The fine uneven structure may suitably be shallow, have a short pitch or be provided at a slant to the light propagation direction, in order to preclude a diffraction effect.
REFERENCES:
patent: 4729640 (1988-03-01), Sakata
patent: 4847857 (1989-07-01), Ohkura
patent: 4850681 (1989-07-01), Yamanobe et al.
patent: 5040188 (1991-08-01), Long et al.
patent: 5070509 (1991-12-01), Meyers et al.
patent: 5088097 (1992-02-01), Ono et al.
patent: 5091916 (1992-02-01), Cimini, Jr. et al.
patent: 5220573 (1993-06-01), Sakata et al.
patent: 5271030 (1993-12-01), Chinen
Stoll et al, "Multiply Resonant Distributed Feedback Lasers", IEEE Journal of Quantum Electronics, vol. QE-12, No. 1, Jan. 76.
Nakano et al., "AlGaAs/GaAs Visible Distributed Feedback Laser Operating at 770nm", in Electronics Letters, vol. 23, No. 25, Dec. 1987, pp. 1342-1343.
Patent Abstracts of Japan, vol. 15, No. 241 (kokai 3-076289) Jun. 1991.
Ohguri Noriaki
Ouchi Toshihiko
Sakata Hajime
Uchida Mamoru
Bovernick Rodney B.
Canon Kabushiki Kaisha
Phan Luong-Quyen T.
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