Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Patent
1992-07-14
1994-10-18
Sikes, William L.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
257139, 257141, 257142, 257143, 361 87, 361100, H02H 7122, H01L 2706, H01L 2974, H01L 2910
Patent
active
053571207
ABSTRACT:
A compound semiconductor device is provided which includes a thyristor region constructed by four continuous layers of p-n-p-n and an MOSFET region which is formed in the intermediate n layer of the thyristor region so as to be away from the intermediate p layer. The MOSFET is constructed by a p well layer, a source layer, and a drain layer. One main electrode of the device is in ohmic contact with the outside p layer of the thyristor region. While the other main electrode is in ohmic contact with the source layer and well layer of the MOSFET region. An arrangement is provided for electrically connecting the outside n layer of the thyristor region and the drain layer of the MOSFET region. Also, a first insulating gate is formed on the well layer between the source layer and the drain layer of the MOSFET region and a second insulating gate is formed on the intermediate p layer of the thyristor region; with the first and second insulating gates being electrically connected.
REFERENCES:
patent: 4546423 (1985-10-01), Seki
patent: 4959703 (1990-10-01), Ogura et al.
patent: 5124772 (1992-06-01), Hideshima et al.
patent: 5144400 (1992-10-01), Bauer
The MOS-Gated Emitter Switched Thyristor, vol. 11, No. 2, Feb. 1990 B. Jayant Baliga, IEEE. Electron Device Letters.
Abraham Fetsum
Hitachi , Ltd.
Sikes William L.
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