Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1994-07-19
1995-12-26
Sikes, William L.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
252137, 252138, 252139, 252141, H01L 2974, H01L 2900, H01L 2910
Patent
active
054790301
ABSTRACT:
A compound semiconductor device is provided which includes a thyristor region constructed by four continuous layers of p-n-p-n and an MOSFET region which is formed in the intermediate n layer of the thyristor region so as to be away from the intermediate p layer. The MOSFET is constructed by a p well layer, a source layer, and a drain layer. One main electrode of the device is in ohmic contact with the outside p layer of the thyristor region while the other main electrode is in ohmic contact with the source layer and well layer of the MOSFET region. An arrangement is provided for electrically connecting the outside n layer of the thyristor region and the drain layer of the MOSFET region. Also, a first insulating gate is formed on the well layer between the source layer and the drain layer of the MOSFET region and a second insulating gate is formed on the intermediate p layer of the thyristor region with the first and second insulating gates being electrically connected.
REFERENCES:
patent: 4546423 (1985-10-01), Seki
patent: 4959703 (1990-10-01), Ogura et al.
patent: 5124772 (1992-06-01), Hideshima et al.
patent: 5144400 (1992-10-01), Bauer
Abraham Fetsum
Hitachi , Ltd.
Sikes William L.
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