Compound semiconductor device and doherty amplifier using...

Details Compound semiconductor device and doherty amplifier using... Compound semiconductor device and doherty amplifier using...

2008-02-19

2010-02-16

Menz, Douglas M (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S192000

Reexamination Certificate

active

07663162

ABSTRACT:
A lower electron supply layer is disposed over a lower electron transport layer made of compound semiconductor. The lower electron supply layer is made of n-type compound semiconductor having an electron affinity smaller than that of the lower electron transport layer. An upper electron transport layer is disposed over the lower electron supply layer. The upper electron transport layer is made of compound semiconductor having a doping concentration lower than that of the lower electron supply layer or non-doped compound semiconductor. An upper electron supply layer is disposed over the upper electron transport layer. The upper electron supply layer is made of n-type compound semiconductor having an electron affinity smaller than that of the upper electron transport layer. A source and drain electrodes are disposed over the upper electron supply layer. A gate electrode is disposed over the upper electron supply layer between the source and drain electrodes.

REFERENCES:
patent: 2003-229439 (2003-08-01), None
patent: 2006-165207 (2006-06-01), None
patent: 2006-166141 (2006-06-01), None
patent: WO 00/65663 (2000-11-01), None
Chen K. J. et al: “AlGaN-GaN Double-Channel HEMTs”; pp. 438-446.
Kevin J. Webb, et al.: “Fabrication and Operation of a Velocity Modulation Transistor”; pp. 2701-2709.
European Search Report dated Mar. 16, 2009.
Japanese Office Action dated Apr. 28, 2009.
Office Action dated Oct. 19, 2009 corresponding to Korean patent application No. 10-2008-17016.

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