Compound semiconductor device and a method of manufacturing the

Details Compound semiconductor device and a method of manufacturing the Compound semiconductor device and a method of manufacturing the

1989-08-24

1990-05-15

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG17, 148DIG26, 148DIG97, 148DIG169, 156612, 437 90, 437 85, 437 99, 437107, 437132, 437939, 437946, 437976, H01L 21203, H01L 2120

Patent

active

049258109

ABSTRACT:
A compound semiconductor device comprises a substrate formed from a single crystal of silicon, a layer of an insulator formed on a portion of a surface of the substrate, at least one layer of a high resistance compound semiconductor formed on the insulator layer, and at least one layer of a single crystal of a compound semiconductor formed on a different portion of the substrate surface from the insulator layer. The device can be manufactured by forming an insulator layer on one portion of a surface of a single crystal silicon substrate, and growing a compound semiconductor by epitaxy on the insulator layer and on the different portion from the insulator layer. One of useful applications is a hybrid semiconductor device having a compound semiconductor formed from e.g. GaAs on a silicon substrate.

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