Compound semiconductor device and a manufacturing method thereof

Details Compound semiconductor device and a manufacturing method thereof Compound semiconductor device and a manufacturing method thereof

1990-10-25

1991-06-18

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437133, 156649, H01L 21283, H01L 21306, H01L 2973

Patent

active

050249584

ABSTRACT:
A high-speed compound semiconductor device includes semiconductor layers of a group III-V alloy laminated in a vertical direction. The device uses a base electrode that contacts side walls and covers a step portion of a base layer. The device includes an intermediate layer positioned between and comprising a different semiconductor material than that of base and collector layers. The intermediate layer has a different etching rate than those of the base and collector layers. The intermediate layer can be a collector-side barrier layer formed between the collector and base layers in a HET or RHET device. The device of the present invention has reduced capacitance between the base and collector layers and reduced base layer resistance.

REFERENCES:
patent: 4593457 (1986-06-01), Birrittella
patent: 4617724 (1986-10-01), Yokoyama
patent: 4679305 (1987-07-01), Morizuka
patent: 4712121 (1987-12-01), Yokoyama
patent: 4751195 (1988-06-01), Kawai
patent: 4801993 (1989-01-01), Ankri et al.
patent: 4835579 (1989-05-01), Ishibashi et al.
patent: 4837178 (1989-06-01), Ohshima et al.

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