Compound semiconductor device

Details Compound semiconductor device Compound semiconductor device

1987-03-31

1989-04-18

Edlow, Martin H.

357 22, 357 4, H01L 2712

Patent

active

048231711

ABSTRACT:
A compound semiconductor device having a channel layer which is fabricated by alternately laminating an In.sub.x Ga.sub.1-x As compound semiconductor layer (0.7.ltoreq.x.ltoreq.1.0) with thickness of 16 atomic planes or less, and an In.sub.y Ga.sub.1-y As compound semiconductor layer (0.ltoreq.y.ltoreq.0.3) with thickness of 14 atomic planes or less, so that the thickness of the former is greater than that of the latter, in which n-type impurities are doped only in the In.sub.y Ga.sub.1-y As layer (0.ltoreq.y.ltoreq.0.3) side, and a ratio In/Ga on the whole is set at 1.1 or higher.

REFERENCES:
patent: 4424525 (1984-01-01), Mimura
patent: 4471367 (1984-09-01), Chen
patent: 4607272 (1986-08-01), Osburn
patent: 4652896 (1987-03-01), Das
patent: 4663643 (1987-05-01), Mimura
patent: 4665415 (1987-03-01), Esaki
patent: 4672406 (1987-06-01), Sawada

Affiliated with

Also associated with

Rating

Compound semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Compound semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Compound semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2399387