Compound semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor

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257 18, 257 20, H01L 2906, H01L 310328, H01L 310336

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active

057738530

ABSTRACT:
On a compound semiconductor substrate on which a compound semiconductor device is formed, a film having a multilayer structure formed by alternately depositing a multi-element compound semiconductor layer and a GaAs layer containing arsenic excessively deviating from a stoichiometric ratio repeatedly and an active layer deposited on said film having a multilayer structure are formed.
When the thickness of the GaAs layer is made to a critical film thickness or less, even if the GaAs layer and the multi-element compound semiconductor layer have different lattice constants, the strain of lattice mismatch is confined in the vicinity of the interface, and a high resistance is achieved while maintaining a crystal of high quality as it is.

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