Compound semiconductor device

Details Compound semiconductor device Compound semiconductor device

1996-08-22

1998-06-30

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257 18, 257 20, H01L 2906, H01L 310328, H01L 310336

Patent

active

057738530

ABSTRACT:
On a compound semiconductor substrate on which a compound semiconductor device is formed, a film having a multilayer structure formed by alternately depositing a multi-element compound semiconductor layer and a GaAs layer containing arsenic excessively deviating from a stoichiometric ratio repeatedly and an active layer deposited on said film having a multilayer structure are formed.
When the thickness of the GaAs layer is made to a critical film thickness or less, even if the GaAs layer and the multi-element compound semiconductor layer have different lattice constants, the strain of lattice mismatch is confined in the vicinity of the interface, and a high resistance is achieved while maintaining a crystal of high quality as it is.

REFERENCES:
patent: 4558336 (1985-12-01), Chang et al.
patent: 4952527 (1990-08-01), Calawa et al.
patent: 5023675 (1991-06-01), Ishikawa
patent: 5105241 (1992-04-01), Ando
patent: 5146295 (1992-09-01), Imanaka et al.
patent: 5166766 (1992-11-01), Grudkowski et al.
patent: 5285087 (1994-02-01), Narita et al.
patent: 5343057 (1994-08-01), Gerard et al.
patent: 5389806 (1995-02-01), Hickernell et al.
"A 0.1-ym A1IN As/GaIn As MODFET Fabricated on GaAs Substrates"; Wang et al, IEEE Electron Devices, vol. 35 No. 7, Jul. 1988.
"Arsenic Precipitates and the Semi-insulating Properties of GaAs Buffer Layers Grown by LTMBE"; Warren et al; App. Phys. Lett. 57(13) 1990; pp. 1331-1333.
Govind P. Agrawal et al., "Semiconductor Lasers", pp. 162-179.
L. Nguyen, a. Brown, M. Delaney, U. Mishra, L. Larason, L. Tellosian, M. Melendes, C. Hooper and M. Thomson, Tech, Dig., IEDEM 89 (IEEE, New York, 1989, p. 105.
Technical Report and Research, ED 88-94 (1988), pp. 9-14.
"Extremely High Gain 0.15 .mu.m Gate-Length InAlAs/InGaAs/InP HEMTs," P. Ho et al., Electronics Letters, vol. 27, No. 4 (1991), pp. 325-327.
"In.sub.0.52 AI.sub.0.48 AS/IN.sub.0.53 Ga.sub.0.47 As Heterojunction Bipolar Transistor on GaAs by Molecular Beam Expitaxy," T. Won et al., App. Phys. Letters 53 (23) (1988), pp. 2311-2313.
"A 0.1-.mu.m Gate A1.sub.0.5 In.sub.0.5 As/Ga.sub.0.5 As MODFET Fabricated on GaAs Substrates," G. U. Wang et al., IEEE Trans. Electron Devices, vol. 35, No. 7 (1988) pp. 818-823.

Affiliated with

Also associated with

Rating

Compound semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Compound semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Compound semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1862684