Compound semiconductor device

Details Compound semiconductor device Compound semiconductor device

1997-08-05

1998-08-04

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

H01L 310328, H01L 310336, H01L 31072, H01L 31109

Patent

active

057897670

ABSTRACT:
A compound semiconductor device having a first compound semiconductor layer, a second compound semiconductor layer containing at least In or Al which is in contact with the first compound semiconductor layer to generate a two dimensional electron gas layer in the interface between the first and second compound semiconductor layers, a third compound semiconductor layer of GaAs provided so as to be coated on the second compound semiconductor layer, a source electrode and a drain electrode electrically connected to the two dimensional electron gas layer, and a gate electrode provided between the source electrode and the drain electrode so as to be in Schottky contact with the third compound semiconductor layer.

REFERENCES:
Electronics Letters, vol. 26, No. 3, Feb. 1, 1990, A. Cappy et al., "Ultra High Transconductance 0.25 .mu.m Gate MESFET With Strained InGaAs Buffer Layer", pp. 161-162.
Extended Abstracts of the 21st Conference on Solid State Devices and Materials, Tokyo, 1989, M. Itoh et al., "Effect of InGaAs Well Width on Low-Noise Performance in AlGaAs/InGaAs Pseudomorphic HEMT", pp. 285-288 no month.
IEEE MTT-S International Microwave Symposium Digest, Boston, MA, US, 10-14 Jun., 1991, J.C. Huang et al., "An AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) For X- and Ku-band Power Applications", pp. 713-716.

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