Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Patent
1997-10-28
1999-07-27
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
257587, 257776, H01L 310328
Patent
active
059294680
ABSTRACT:
A compound semiconductor device has a stripe-shaped heterojunction bipolar transistor cell region mounted on a semi-insulating semiconductor substrate and comprising an array of unit transistor cells each having a base region, an emitter region, and a collector region. A base wiring electrode and a collector wiring electrode are disposed on the substrate parallel to the cell region. The base wiring electrode and the collector wiring electrode have toothed shapes connected to the base region and the collector region. A heat-radiating electrode is disposed on the substrate parallel to the cell region with the base wiring electrode or the collector wiring electrode. A relatively thick gold-plated layer is connected to the heat-radiating electrode and the emitter regions of the unit cells and has a bridge structure over the base wiring electrode or the collector wiring electrode with an insulating film interposed therebetween. First and second bonding pads are disposed on the substrate near one and opposite sides thereof and connected to the base wiring electrode and the collector wiring electrode, respectively.
Prenty Mark V.
Sanyo Electric Co,. Ltd.
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