Compound semiconductor device

Details Compound semiconductor device Compound semiconductor device

1992-08-11

1994-05-17

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257281, 257284, 257285, 257472, H01L 29161

Patent

active

053130936

ABSTRACT:
A compound semiconductor device includes an undoped semiconductor layer; a doped semiconductor layer formed on the undoped semiconductor layer and having smaller electron affinity than the undoped semiconductor layer; a gate electrode formed on the doped semiconductor layer; a cap layer formed on the doped semiconductor layer; and a source electrode and a drain electrode respectively formed on the cap layer. In the device, an undoped-material layer having greater electron affinity than the doped semiconductor layer and the cap layer, is formed between the doped semiconductor layer and the cap layer. A layer which has the same composition and impurities as those of the doped semiconductor layer and whose impurity concentration is sufficiently higher than an impurity concentration of the doped semiconductor layer may, be provided between the doped semiconductor layer and the cap layer.

REFERENCES:
patent: 5043777 (1991-08-01), Sriram

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