Compound semiconductor device

Details Compound semiconductor device Compound semiconductor device

1989-05-02

1990-05-29

James, Andrew J.

357 22, H01L 2948

Patent

active

049299859

ABSTRACT:
A compound semiconductor device comprises: a III-V group compound semiconductor substrate and a Schottky junction electrode of p-type amorphous silicon carbide (a-SiC) layer provided on the III-V group compound semiconductor substrate and an amorphous silicon-germanium-boron (a-Si-Ge-B) layer provided on the p-type amorphous silicon carbide layer.

REFERENCES:
patent: 4732871 (1988-03-01), Buchmann et al.

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