Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2006-02-21
2006-02-21
Wilson, Allan R. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S289000, C257S410000
Reexamination Certificate
active
07002189
ABSTRACT:
The compound semiconductor device comprises an i-GaN buffer layer12formed on an SiC substrate10; an n-AlGaN electron supplying layer16formed on the i-GaN buffer layer12; an n-GaN cap layer18formed on the n-AlGaN electron supplying layer16; a source electrode20and a drain electrode22formed on the n-GaN cap layer18; a gate electrode26formed on the n-GaN cap layer18between the source electrode20and the drain electrode22; a first protection layer24formed on the n-GaN cap layer18between the source electrode20and the drain electrode22; and a second protection layer30buried in an opening28formed in the first protection layer24between the gate electrode26and the drain electrode22down to the n-GaN cap layer18and formed of an insulation film different from the first protection layer.
REFERENCES:
patent: 5929467 (1999-07-01), Kawai et al.
patent: 6091083 (2000-07-01), Hata et al.
patent: 2002/0171405 (2002-11-01), Watanabe
patent: 2001210657 (2001-08-01), None
patent: 2002-359256 (2002-12-01), None
Fujitsu Limited
Wilson Allan R.
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