Compound semiconductor device

Details Compound semiconductor device Compound semiconductor device

1998-02-18

1999-08-31

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257 96, 257 97, 257184, 257190, 257201, 257627, 257628, 438973, H01L 3300

Patent

active

059456906

ABSTRACT:
The present invention includes a process of growing a compound semiconductor layer locally, after applying radical particles that do not become an etchant of a compound semiconductor layer to an insulating mask so as to terminate the surface of the insulating mask in a state that the compound semiconductor layer is covered with the insulating mask, on the surface of the compound semiconductor layer exposed from the insulating mask.

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Hiruma et al.; Journal of Crystal Growth; V. 102; pp. 717-724, 1990.
Shimoyama et al.; Inst. of Applied Physics Applied Electronic Physical Prop. Subcommittee Meeting Research Paper (AP922227); No. 445, pp. 15-20, Sep. 10, 1992.
Ishikawa et al.; Applied Physics; vol. 2, No. 2; pp. 102-112, 1993.

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